參數(shù)資料
型號(hào)： 28F160C2
廠商： Intel Corp.
英文描述： 2.4V Advanced+ Boot Block Flash Memory(2.4V高級(jí)引導(dǎo)塊閃速存儲(chǔ)器)
中文描述： 2.4V的高級(jí)啟動(dòng)塊閃存（2.4V的高級(jí)引導(dǎo)塊閃速存儲(chǔ)器）
文件頁數(shù)： 32/56頁
文件大?。?/td> 283K
代理商： 28F160C2
28F800C2, 28F160C2
E
32
PRELIMINARY
NOTES:
1.
2.
3.
4.
Write timing characteristics during erase suspend are the same as during write-only operations.
Refer to Table 5 for valid A
IN
or D
IN
.
Sampled, but not 100% tested.
Write pulse width (t
) is defined from CE# or WE# going low (whichever goes low last)
to CE# or WE# going high
(whichever goes high first). Hence, t
= t
= t
= t
= t
. Similarly, Write pulse width high (t
) is defined
from CE# or WE# going high (whichever goes high first)
to CE# or WE# going low (whichever goes low first). Hence,
t
WPH
= t
WHWL
= t
EHEL
= t
WHEL
= t
EHWL
.
See Figure 5: Input/Output Reference Waveformfor timing measurements and maximum allowable input slew rate.
See Figure 8: AC Waveform: Program and Erase Operations.
5.
6.
4.7
Erase and Program Timings
(1)
V
PP
1.65 V
–3.0 V
11.4 V–12.6 V
Symbol
Parameter
Note
Typ
(1)
Max
Typ
(1)
Max
Unit
t
BWPB
4-KW Parameter Block
Word Program Time
2, 3
0.10
0.30
0.03
0.12
s
t
BWMB
32-KW Main Block
Word Program Time
2, 3
0.8
2.4
0.24
1
s
t
WHQV1
/ t
EHQV1
Word Program Time
2, 3
22
200
8
185
μs
t
WHQV2
/ t
EHQV2
4-KW Parameter Block
Erase Time
2, 3
0.5
4
0.4
4
s
t
WHQV3
/ t
EHQV3
32-KW Main Block
Erase Time
2, 3
1
5
0.6
5
s
t
WHRH1
/ t
EHRH1
Program Suspend Latency
3
5
10
5
10
μs
t
WHRH2
/ t
EHRH2
Erase Suspend Latency
3
5
20
5
20
μs
NOTES:
1.
2.
3.
Typical values measured at T
A
=
+25 °C and nominal voltages.
Excludes external system-level overhead.
Sampled, but not 100% tested.
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