參數(shù)資料
型號: 28F160C2
廠商: Intel Corp.
英文描述: 2.4V Advanced+ Boot Block Flash Memory(2.4V高級引導(dǎo)塊閃速存儲器)
中文描述: 2.4V的高級啟動塊閃存(2.4V的高級引導(dǎo)塊閃速存儲器)
文件頁數(shù): 29/56頁
文件大?。?/td> 283K
代理商: 28F160C2
E
28F800C2, 28F160C2
29
PRELIMINARY
4.5
AC Characteristics
—Read Operations
(1,4)
—Extended Temperature
Density
8/16 Mbit
Product
–100
–120
V
CC
2.7 V–3.0 V
2.4 V–3.0 V
2.7 V–3.0 V
2.4 V–3.0 V
#
Sym
Parameter
Note
Min
Max
Min
Max
Min
Max
Min
Max
Unit
R1
t
AVAV
Read Cycle Time
90
100
110
120
ns
R2
t
AVQV
Address to
Output Delay
90
100
110
120
ns
R3
t
ELQV
CE# to Output
Delay
2
90
100
110
120
ns
R4
t
GLQV
OE# to Output
Delay
2
30
30
30
30
ns
R5
t
PHQV
RP# to Output
Delay
150
150
150
150
ns
R6
t
ELQX
CE# to Output in
Low Z
3
0
0
0
0
ns
R7
t
GLQX
OE# to Output in
Low Z
3
0
0
0
0
ns
R8
t
EHQZ
CE# to Output in
High Z
3
25
25
25
25
ns
R9
t
GHQZ
OE# to Output in
High Z
3
20
20
20
20
ns
R10
t
OH
Output Hold from
Address, CE#, or
OE# Change,
Whichever
Occurs First
3
0
0
0
0
ns
NOTES:
1.
2.
3.
4.
See Figure 7: AC Waveform: Read Operations
OE# may be delayed up to t
ELQV
–t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
Sampled, but not 100% tested.
See Figure 5:
Input/Output Reference Waveform
for timing measurements and maximum allowable input slew rate.
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