參數(shù)資料
型號(hào)： 28F128
廠商： Intel Corp.
英文描述： 3 Volt Intel StrataFlash Memory
中文描述： 3伏特英特爾StrataFlash存儲(chǔ)器
文件頁數(shù)： 54/58頁
文件大小： 380K
代理商： 28F128
28F128J3A, 28F640J3A, 28F320J3A
48
Preliminary
6.7
Block Erase, Program, and Lock-Bit Configuration
Performance
(1,2,3)
NOTES:
1. Typical values measured at T
A
= +25
°
C and nominal voltages. Assumes corresponding lock-bits are not set.
Subject to change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (t
WHQV1
, t
EHQV1
) is 6.8 μs/byte (typical)
7. Effective per-word program time (t
WHQV2
, t
EHQV2
) is 13.6 μs/word (typical)
8. Max values are measured at worst case temperature and V
CC
corner after 100k cycles
#
Sym
Parameter
Notes
Typ
Max
Unit
W16
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
4,5,6,7
218
654
μs
W16
t
WHQV3
t
EHQV3
Byte Program Time (Using Word/Byte Program
Command)
4
210
630
μs
Block Program Time (Using Write to Buffer Command)
4
0.8
2.4
sec
W16
t
WHQV4
t
EHQV4
Block Erase Time
4
1.0
5.0
sec
W16
t
WHQV5
t
EHQV5
Set Lock-Bit Time
4
64
75
μs
W16
t
WHQV6
t
EHQV6
Clear Block Lock-Bits Time
4
0.5
0.70
sec
W16
t
WHRH1
t
EHRH1
Program Suspend Latency Time to Read
25
75
μs
W16
t
WHRH
t
EHRH
Erase Suspend Latency Time to Read
26
35
μs
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F128J3A 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Intel StrataFlash Memory
28F128J3A150 制造商: 功能描述: 制造商:INTELC 功能描述: 制造商:undefined 功能描述:
28F128J3A-150 制造商: 功能描述: 制造商:undefined 功能描述:
28F128J3D75 制造商: 功能描述: 制造商:Intel 功能描述:
28F128J3FS-12ET 制造商: 功能描述: 制造商:undefined 功能描述:
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