參數(shù)資料
型號(hào): ZVN4210G
廠商: ZETEX PLC
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
中文描述: 0.8 A, 100 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOT-223, 4 PIN
文件頁數(shù): 1/3頁
文件大小: 36K
代理商: ZVN4210G
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - NOVEMBER 1995
FEATURES
*
Low R
DS(on)
= 1.5
PARTMARKING DETAIL - ZVN4210
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
100
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
0.8
A
6
A
Gate-Source Voltage
±
20
2
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
W
-55 to +150
°C
MAX .
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DS S
100
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage V
GS (th)
Gate-Body Leakage
0.8
2.4
V
I
D
=1mA, V
DS
= V
GS
V
GS
=
±
20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
=1.5A
V
GS
=5V,I
D
=500mA
V
DS
=25V,I
D
=1.5A
I
GS S
I
DS S
100
nA
Zero Gate Voltage Drain
Current
10
100
μ
A
μ
A
A
On-State Drain Current(1)
I
D(on)
R
DS (on)
2.5
Static Drain-Source On-State
Resistance (1)
1.5
1.8
mS
Forward Transconductance(1)(2) g
fs
Input Capacitance (2)
250
C
iss
C
oss
100
pF
Common Source Output
Capacitance (2)
40
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
Turn-On Delay Time (2)(3)
12
pF
t
d(on)
t
r
t
d(off)
t
f
4
ns
V
DD
25V, I
D
=1.5A
Rise Time (2)(3)
8
ns
Turn-Off Delay Time (2)(3)
20
ns
Fall Time (2)(3)
30
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN4210G
D
D
S
G
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