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參數(shù)資料
| 型號(hào)： | ZVN4310A |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 中文描述： | 900 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | ZVN4310A |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
*
100 Volt V
DS
*
R
DS(on)
= 0.5
*
Spice model available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DP
100
V
Continuous Drain Current at T
amb
=25°C
Practical Continuous Drain Current at
T
amb
=25°C
Pulsed Drain Current
0.9
A
1
A
I
DM
V
GS
P
tot
P
totp
T
j
:T
stg
12
±
20
850
A
Gate Source Voltage
V
Power Dissipation at T
amb
=25°C
Practical Power Dissipation at T
amb
=25°C*
Operating and Storage Temperature Range
mW
1.13
W
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX .
UNIT CONDITIONS .
Drain-Source
Breakdown Voltage
BV
DS S
100
V
I
D
=1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS (th)
1
3
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GS S
20
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DS S
10
100
μ
A
μ
A
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
On-State Drain
Current(1)
I
D(on)
9
A
V
DS
=25 V, V
GS
=10V
S tatic Drain-Source
On-State Resistance
(1)
R
DS (on)
0.36
0.48
0.5
0.65
V
GS
=10V,I
D
=3A
V
GS
=5V, I
D
=1.5A
Forward
Transconductance
(1)(2)
g
fs
600
mS
V
DS
=25V,I
D
=3A
E-Line
TO92 Compatible
ZVN4310A
3-393
D
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參數(shù)描述 |
|---|---|
| ZVN4310A | 制造商:Diodes Incorporated 功能描述:MOSFET N LOGIC E-LINE |
| ZVN4310ASTOA | 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN4310ASTOB | 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN4310ASTZ | 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN4310G | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
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