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參數(shù)資料
| 型號(hào)： | ZVN4306G(3) |
| 廠商： | Zetex Semiconductor |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 31K |
| 代理商： | ZVN4306G(3) |
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - OCTOBER 1995
FEATURES
*
Very low R
DS(ON)
= .33
APPLICATIONS
*
DC - DC Converters
*
Solenoids/Relay Drivers for Automotive
PARTMARKING DETAIL -
ZVN4306
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
60
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
2.1
A
15
A
Gate Source Voltage
±
20
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
I
GSS
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance (1)
0.32
Forward
Transconductance (1)
Input Capacitance (2)
C
iss
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
t
r
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
t
f
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 411
3
W
-55 to +150
°C
MAX.
UNIT
V
CONDITIONS.
I
D
=1mA, V
GS
=0V
BV
DSS
60
V
GS(th)
1.3
3
V
I
D
=1mA, V
DS
= V
GS
20
10
100
nA
μ
A
μ
A
A
V
GS
=
±
20V, V
DS
=0V
V
DS
=60V, V
GS
=0V
V
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=10V, V
GS
=10V
I
DSS
I
D(on)
12
R
DS(on)
0.22
0.33
0.45
S
V
GS
=10V, I
=3A
V
GS
=5V, I
D
=1.5A
V
DS
=25V,I
D
=3A
g
fs
0.7
350
140
pF
pF
C
oss
V
DS
=25 V, V
GS
=0V, f=1MHz
C
rss
30
pF
t
d(on)
8
ns
V
DD
≈
25V, V
GEN
=10V, I
D
=3A
25
30
ns
ns
t
d(off)
16
ns
ZVN4306G
D
D
S
G
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZVN4306GTA | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN4306GTC | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN4306GV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| ZVN4306GVTA | 功能描述:MOSFET Avalanche RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN4306GVTC | 功能描述:MOSFET Avalanche RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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