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參數(shù)資料
| 型號： | ZVN3306F |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 中文描述： | 150 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 94K |
| 代理商： | ZVN3306F |
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
*
R
DS(on)
= 5
*
60 Volt V
DS
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ZVP3306F
MC
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
60
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
150
mA
3
A
Gate-Source Voltage
±
20
330
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
mW
-55 to +150
°C
MAX.
UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8
2.4
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
I
DSS
20
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=18V, V
GS
=10V
V
GS
=10V, I
D
=500mA
Zero Gate Voltage
Drain Current
0.5
50
μ
A
μ
A
mA
On-State Drain Current(1)
I
D(on)
R
DS(on)
750
Static Drain-Source On-State
Resistance (1)
5
Forward Transconductance
(1)(2)
g
fs
150
mS
V
DS
=18V, I
D
=500mA
Input Capacitance (2)
C
iss
C
oss
35
pF
Common Source
Output Capacitance (2)
25
pF
V
DS
=18V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
8
pF
Turn-On Delay Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
3 typ
5
ns
V
DD
≈
18V, I
D
=500mA
Rise Time (2)(3)
4 typ
7
ns
Turn-Off Delay Time (2)(3)
4 typ
6
ns
Fall Time (2)(3)
5 typ
8
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN3306F
D
G
S
SOT23
3 - 393
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