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參數(shù)資料
| 型號： | ZVN3310F |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 中文描述： | 100 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 78K |
| 代理商： | ZVN3310F |
SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995
FEATURES
*
100 Volt V
DS
*
R
DS(on)
= 10
%
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ZVP3310F
MF
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
100
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
100
mA
2
A
Gate-Source Voltage
±
20
330
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
mW
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
100
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
0.8
2.4
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
I
DSS
20
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=500mA
Zero Gate Voltage
Drain Current
1
50
μ
A
μ
A
mA
On-State Drain Current(1)
I
D(on)
R
DS(on)
500
Static Drain-Source On-State
Resistance (1)
10
Forward Transconductance
(1)(2)
g
fs
100
mS
V
DS
=25V, I
D
=500mA
Input Capacitance (2)
C
iss
C
oss
40
pF
Common Source
Output Capacitance (2)
15
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
5
pF
Turn-On Delay Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
3 typ
5
ns
V
DD
≈
25V, I
D
=500mA
Rise Time (2)(3)
5 typ
7
ns
Turn-Off Delay Time (2)(3)
4 typ
6
ns
Fall Time (2)(3)
5 typ
7
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVN3310F
D
G
S
SOT23
3 - 396
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZVN3310F | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 |
| ZVN3310FTA | 功能描述:MOSFET N-Chnl 100 V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN3310FTA-CUT TAPE | 制造商:DIODES 功能描述:ZVN3310F Series 100 V 10 Ohm N-Channel Enhancement Mode MOSFET- SOT-23 |
| ZVN3310FTC | 功能描述:MOSFET N-Chnl 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ZVN3320A | 功能描述:MOSFET N-Chnl 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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