參數(shù)資料
型號(hào)： ZVN4206A(3)
廠商： Zetex Semiconductor
元件分類： TVS-瞬態(tài)抑制二極管
英文描述： Transient Voltage Suppressor Diodes
文件頁數(shù)： 1/3頁
文件大?。?/td> 98K
代理商： ZVN4206A(3)
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – JUNE 94
FE60 Volt V
*
DS
*
R
DS(on)
= 1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
60
V
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
600
mA
8
A
Gate-Source Voltage
±
20
0.7
V
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX.
UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
60
V
I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
1.3
3
V
ID=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
I
DSS
100
nA
V
GS
=
±
20V, V
DS
=0V
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C
(2)
Zero Gate Voltage Drain
Current
10
100
μ
A
μ
A
On-State Drain Current(1)
I
D(on)
R
DS(on)
3
A
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
=1.5A
V
GS
=5V,I
D
=500mA
Static Drain-Source On-State
Resistance (1)
1
1.5
Forward Transconductance(1)(2
)
g
fs
300
mS
V
DS
=25V,I
D
=1.5A
Input Capacitance (2)
C
iss
C
oss
100
pF
Common Source Output
Capacitance (2)
60
pF
V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2)
C
rss
20
pF
Turn-On Delay Time (2)(3)
t
d(on)
t
r
t
d(off)
t
f
8
ns
V
DD
≈
25V, I
D
=1.5A
Rise Time (2)(3)
12
ns
Turn-Off Delay Time (2)(3)
12
ns
Fall Time (2)(3)
15
ns
(1) Measured under pulsed conditions. Width=300
μ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
source impedance and <5ns rise time on a pulse generator
ZVN4206A
DGS
E-LINE
TO92 COMPATIBLE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ZVN4206AM1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 600MA I(D) | SO
ZVN4206ASTOA 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVN4206ASTOB 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVN4206ASTZ 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ZVN4206AV 功能描述:MOSFET Avalanche RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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