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參數(shù)資料
| 型號(hào)： | ZTX653DCSM |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 中文描述： | 2000 mA, 100 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC2-6 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | ZTX653DCSM |
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
*
100 Volt V
CEO
*
2 Amp continuous current
*
Low saturation voltage
*
P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX652
ZTX653
UNIT
Collector-Base Voltage
V
CBO
100
120
V
Collector-Emitter Voltage
V
CEO
80
100
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
2
A
Power Dissipation
at T
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
ZTX652
PARAMETER
SYMBOL
ZTX653
UNIT CONDITIONS.
MIN.
TYP.
MAX. MIN.
TYP.
MAX.
Collector-Base
Breakdown
Voltage
V
(BR)CBO
100
120
V
I
C
=100
μ
A
Collector-Emitter
Breakdown
Voltage
V
(BR)CEO
80
100
V
I
C
=10mA*
Emitter-Base
Breakdown
Voltage
V
(BR)EBO
5
5
V
I
E
=100
μ
A
Collector Cut-Off
Current
I
CBO
0.1
10
0.1
10
μ
A
μ
A
μ
A
μ
A
μ
A
V
CB
=80V
V
CB
=100V
V
CB
=80V,
T
amb
=100°C
V
CB
=100V,
T
amb
=100°C
Emitter Cut-Off
Current
I
EBO
0.1
0.1
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.13
0.23
0.3
0.5
0.13
0.23
0.3
0.5
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.25
0.9
1.25
V
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8
1
0.8
1
V
IC=1A, V
CE
=2V*
ZTX652
ZTX653
C
E-Line
TO92 Compatible
3-222
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| ZTX653DCSM_02 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:NPN/PNP DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICTIONS |
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| ZTX653M1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 2A I(C) | SO |
| ZTX653STOA | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX653STOB | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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