- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373833 > ZTX656 (ZETEX PLC) NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS PDF資料下載
參數(shù)資料
| 型號(hào)： | ZTX656 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS |
| 中文描述： | 500 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 50K |
| 代理商： | ZTX656 |
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTORS
ISSUE 2 JULY 94
FEATURES
*
300 Volt V
CEO
*
0.5 Amp continuous current
*
P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX656
ZTX657
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
200
300
V
Collector-Emitter Voltage
200
300
V
Emitter-Base Voltage
5
V
Peak Pulse Current
1
A
Continuous Collector Current
0.5
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
1
W
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
ZTX656
PARAMETER
SYMBOL
ZTX657
UNIT
CONDITIONS.
MIN.
MAX.
MIN.
MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
200
300
V
I
C
=100
μ
A, I
E
=0
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
200
300
V
I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
5
V
I
E
=100
μ
A, I
C
=0
Collector Cut-Off
Current
I
CBO
100
100
nA
nA
V
CB
=160V, I
E
=0
V
CB
=200V, I
E
=0
Emitter Cut-Off
Current
I
EBO
100
100
nA
V
EB
=3V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
0.5
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1
1
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1
1
V
IC=100mA, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
50
40
50
40
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
Transition
Frequency
f
T
30
30
MHz
I
=10mA, V
CE
=20V
f=20MHz
E-Line
TO92 Compatible
ZTX656
ZTX657
3-227
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZTX657 | NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS |
| ZTX658 | NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR |
| ZTX688 | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| ZTX688B | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| ZTX689B | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZTX656DA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP |
| ZTX656DB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP |
| ZTX656DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | CHIP |
| ZTX656STOA | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX656STOB | 功能描述:兩極晶體管 - BJT - RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。