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參數(shù)資料
| 型號： | ZTX688 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| 中文描述： | NPN硅平面中功率高增益晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 66K |
| 代理商： | ZTX688 |
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 MAY 94
FEATURES
*
12 Volt V
CEO
*
Gain of 400 at I
C
=3 Amps
*
Very low saturation voltage
APPLICATIONS
*
Darlington replacement
*
Flash gun convertors
*
Battery powered circuits
*
Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
12
V
Collector-Emitter Voltage
V
CEO
12
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
10
A
Continuous Collector Current
I
C
3
A
Practical Power Dissipation*
P
totp
1.5
W
Power Dissipation
at T
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
12
V
I
C
=100
μ
A
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
12
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
0.1
μ
A
μ
A
V
CB
=10V
Emitter Cut-Off Current
I
EBO
0.1
V
EB
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.04
0.06
0.18
0.35
V
V
V
V
I
C
=0.1A, I
B
=1mA
I
C
=0.1A, I
=0.5mA*
I
C
=1A, I
B
=50mA*
I
C
=3A, I
B
=20mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1
V
I
C
=3A, I
B
=20mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1
V
IC=3A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
100
I
C
=0.1A, V
=2V*
I
C
=3A, V
CE
=2V*
I
C
=10A, V
CE
=2V*
E-Line
TO92 Compatible
3-232
C
ZTX688B
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| ZTX688B | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| ZTX689B | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZTX688B | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX688B | 制造商:Diodes Incorporated 功能描述:TRANSISTOR NPN E-LINE |
| ZTX688BSTOA | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX688BSTOB | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX688BSTZ | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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