- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373833 > ZTX658 (ZETEX PLC) NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | ZTX658 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 58K |
| 代理商： | ZTX658 |
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
*
400 Volt V
CEO
*
0.5 Amp continuous current
*
P
tot
=1 Watt
APPLICATIONS
*
Telephone dialler circuits
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
400
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
5
V
Peak Pulse Current
1
A
Continuous Collector Current
500
mA
Power Dissipation at T
=25°C
derate above 25°C
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO)
400
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=320V
Collector Cut-Off
Current
I
CBO
100
nA
V
CE
=320V
Emitter Cut-Off Current I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
0.25
0.5
V
V
V
I
C
=20mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn On Voltage
V
BE(on)
0.9
V
IC=100mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
40
I
C
=1mA, V
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
E-Line
TO92 Compatible
3-229
ZTX658
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ZTX688 | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| ZTX688B | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| ZTX689B | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| ZTX690B | Controllers; For Use With:E5ZN series; Mounting Type:DIN RoHS Compliant: Yes |
| ZTX692 | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ZTX658_02 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR |
| ZTX658STOA | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX658STOB | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX658STZ | 功能描述:兩極晶體管 - BJT NPN Super E-Line RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| ZTX688 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。