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參數(shù)資料
| 型號： | ZTX658 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR |
| 中文描述： | 500 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 58K |
| 代理商： | ZTX658 |
NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
*
400 Volt V
CEO
*
0.5 Amp continuous current
*
P
tot
=1 Watt
APPLICATIONS
*
Telephone dialler circuits
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
400
V
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
5
V
Peak Pulse Current
1
A
Continuous Collector Current
500
mA
Power Dissipation at T
=25°C
derate above 25°C
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400
V
I
C
=100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO)
400
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=320V
Collector Cut-Off
Current
I
CBO
100
nA
V
CE
=320V
Emitter Cut-Off Current I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
0.25
0.5
V
V
V
I
C
=20mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn On Voltage
V
BE(on)
0.9
V
IC=100mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
50
50
40
I
C
=1mA, V
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
E-Line
TO92 Compatible
3-229
ZTX658
C
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