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參數(shù)資料
| 型號： | ZTX653 |
| 廠商： | ZETEX PLC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON PLANAR(MEDIUM POWER TRANSISTORS) |
| 中文描述： | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92 COMPATIBLE, E-LINE PACKAGE-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 61K |
| 代理商： | ZTX653 |
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
*
100 Volt V
CEO
*
2 Amp continuous current
*
Low saturation voltage
*
P
tot
=1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX652
ZTX653
UNIT
Collector-Base Voltage
V
CBO
100
120
V
Collector-Emitter Voltage
V
CEO
80
100
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
2
A
Power Dissipation
at T
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
ZTX652
PARAMETER
SYMBOL
ZTX653
UNIT CONDITIONS.
MIN.
TYP.
MAX. MIN.
TYP.
MAX.
Collector-Base
Breakdown
Voltage
V
(BR)CBO
100
120
V
I
C
=100
μ
A
Collector-Emitter
Breakdown
Voltage
V
(BR)CEO
80
100
V
I
C
=10mA*
Emitter-Base
Breakdown
Voltage
V
(BR)EBO
5
5
V
I
E
=100
μ
A
Collector Cut-Off
Current
I
CBO
0.1
10
0.1
10
μ
A
μ
A
μ
A
μ
A
μ
A
V
CB
=80V
V
CB
=100V
V
CB
=80V,
T
amb
=100°C
V
CB
=100V,
T
amb
=100°C
Emitter Cut-Off
Current
I
EBO
0.1
0.1
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.13
0.23
0.3
0.5
0.13
0.23
0.3
0.5
V
V
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9
1.25
0.9
1.25
V
Base-Emitter
Turn-On Voltage
V
BE(on)
0.8
1
0.8
1
V
IC=1A, V
CE
=2V*
ZTX652
ZTX653
C
E-Line
TO92 Compatible
3-222
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