參數(shù)資料
型號: XCS05XL-4VQ144C
廠商: Xilinx, Inc.
英文描述: Spartan and Spartan-XL Families Field Programmable Gate Arrays
中文描述: 斯巴達和Spartan - xL的家庭現(xiàn)場可編程門陣列
文件頁數(shù): 57/82頁
文件大?。?/td> 623K
代理商: XCS05XL-4VQ144C
Spartan and Spartan-XL Families Field Programmable Gate Arrays
DS060 (v1.6) September 19, 2001
Product Specification
www.xilinx.com
1-800-255-7778
57
R
Spartan-XL CLB RAM Synchronous (Edge-Triggered) Write Operation Guidelines (cont.)
Testing of switching parameters is modeled after testing
methods specified by MIL-M-38510/605. All devices are
100% functionally tested. Internal timing parameters are
derived from measuring internal test patterns. Listed below
are representative values. For more specific, more precise,
and worst-case guaranteed data, use the values reported
by the static timing analyzer (TRCE in the Xilinx Develop-
ment System) and back-annotated to the simulation netlist.
All timing parameters assume worst-case operating condi-
tions (supply voltage and junction temperature). Values
apply to all Spartan-XL devices and are expressed in nano-
seconds unless otherwise noted.
Spartan-XL CLB RAM Synchronous (Edge-Triggered) Write Timing
Single Port
Symbol
Dual Port RAM
Size
-5
-4
Units
Min
Max
Min
Max
Write Operation
(1)
T
WCDS
Address write cycle time (clock K period)
16x1
7.7
-
8.4
-
ns
T
WPDS
Clock K pulse width (active edge)
16x1
3.1
-
3.6
-
ns
T
ASDS
Address setup time before clock K
16x1
1.3
-
1.5
-
ns
T
DSDS
DIN setup time before clock K
16x1
1.7
-
2.0
-
ns
T
WSDS
WE setup time before clock K
16x1
1.4
-
1.6
-
ns
All hold times after clock K
16x1
0
-
0
-
ns
T
WODS
Data valid after clock K
16x1
-
5.2
-
6.1
ns
Notes:
1.
Read Operation timing for 16 x 1 dual-port RAM option is identical to 16 x 2 single-port RAM timing
Dual Port
WCLK (K)
WE
ADDRESS
DATA IN
DATA OUT
OLD
NEW
T
DSS
T
DHS
T
ASS
T
AHS
T
WSS
T
WPS
T
WHS
T
WSDS
T
WHDS
T
WOS
T
ILO
T
ILO
DS060_34_011300
WCLK (K)
WE
ADDRESS
DATA IN
DATA OUT
OLD
NEW
T
DSDS
T
DHDS
T
ASDS
T
AHDS
T
WPDS
T
WODS
T
ILO
T
ILO
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