參數(shù)資料
型號: WEDPN8M64V-133B2C
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 8M X 64 SYNCHRONOUS DRAM, 5.5 ns, PBGA219
封裝: 21 X 21 MM, PLASTIC, BGA-219
文件頁數(shù): 3/15頁
文件大小: 398K
代理商: WEDPN8M64V-133B2C
WEDPN8M64V-XB2X
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
January 2005
Rev. 2
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS
(NOTES 5, 6, 8, 9, 11)
Parameter
Symbol
-100
-125
-133
Unit
Min
Max
Min
Max
Min
Max
Access time from CLK (pos.
edge)
CL = 3
tAC
7
6
5.5
ns
CL = 2
tAC
7
6
5.5
ns
Address hold time
tAH
1
0.8
ns
Address setup time
tAS
2
1.5
ns
CLK high-level width
tCH
3
2.5
ns
CLK low-level width
tCL
3
2.5
ns
Clock cycle time (22)
CL = 3
tCK
10
8
7.5
ns
CL = 2
tCK
13
10
ns
CKE hold time
tCKH
1
0.8
ns
CKE setup time
tCKS
2
1.5
ns
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
1
0.8
ns
CS#, RAS#, CAS#, WE#, DQM setup time
tCMS
2
1.5
ns
Data-in hold time
tDH
1
0.8
ns
Data-in setup time
tDS
2
1.5
ns
Data-out high-impedance
time
CL = 3 (10)
tHZ
7
6
5.5
ns
CL = 2 (10)
tHZ
7
6
ns
Data-out low-impedance time
tLZ
1
ns
Data-out hold time (load)
tOH
3
ns
Data-out hold time (no load) (26)
tOHN
1.8
ns
ACTIVE to PRECHARGE command
tRAS
50
120,000
45
120,000
50
120,000
ns
ACTIVE to ACTIVE command period
tRC
70
68
ns
ACTIVE to READ or WRITE delay
tRCD
20
ns
Refresh period (8,192 rows) – Commercial,
Industrial
tREF
64
ms
Refresh period (8,192 rows) – Military
tREF
16
ms
AUTO REFRESH period
tRFC
70
ns
PRECHARGE command period
tRP
20
ns
ACTIVE bank A to ACTIVE bank B command
tRRD
20
ns
Transition time (7)
tT
0.3
1.2
0.3
1.2
0.3
1.2
ns
WRITE recovery time
(23)
tWR
1 CLK + 7ns
1 CLK + 7.5ns
(24)
15
ns
Exit SELF REFRESH to ACTIVE command
tXSR
80
ns
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