參數(shù)資料
型號: WED3DL644V10BC
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 4M X 64 SYNCHRONOUS DRAM, 7 ns, PBGA153
封裝: 17 X 23 MM, BGA-153
文件頁數(shù): 9/28頁
文件大?。?/td> 918K
代理商: WED3DL644V10BC
17
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED3DL644V
August 2005
Rev. 6
FIG. 8 PAGE WRITE CYCLE AT DIFFERENT BANK @BURST LENGTH=4
NOTES:
1.
To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2.
To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.
RAS#
CAS#
ADDR
BA
DQM
A10/AP
CKE
CLOCK
CE#
CAc
CBd
RBb
CAa
RAa
DQ
Write
(A-Bank)
Write
(B-Bank)
Row Active
(B-Bank)
Write
(B-Bank)
Precharge
(Both Banks)
Write
(A-Bank)
Row Active
(A-Bank)
WE#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
HIGH
RAa
DAa3
DBb0
DBb1
DBb2
DBb3
DAc0
DAc1
DBd0
DBd1
DAa1
DAa0
DAa2
DON'T CARE
CBb
Note 2
Note 1
RBb
tRDL
tCDL
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