參數(shù)資料
型號: WED3DL644V10BC
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 4M X 64 SYNCHRONOUS DRAM, 7 ns, PBGA153
封裝: 17 X 23 MM, BGA-153
文件頁數(shù): 14/28頁
文件大小: 918K
代理商: WED3DL644V10BC
21
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
WED3DL644V
August 2005
Rev. 6
FIG. 12 READ INTERRUPTED BY PRECHARGE COMMAND & READ BURST STOP
@BURST LENGTH=FULL PAGE
RAS#
CAS#
ADDR
BA
DQM
A10/AP
CKE
CLOCK
CE#
CAb
CAa
RAa
CL = 2
Precharge
(A-Bank)
Read
(A-Bank)
Burst Stop
Read
(A-Bank)
Row Active
(A-Bank)
WE#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
HIGH
DON'T CARE
RAa
QAa0
QAa1
QAa2
QAa3
QAa4
QAb1
QAb0
QAb3
QAb2
QAb5
QAb4
CL = 3
DQ
QAa0
QAa1
QAa2
QAa3
QAa4
QAb1
QAb0
QAb3
QAb2
QAb5
QAb4
Note 3
1
2
NOTES:
1.
At full page mode, burst is end at the end of burst. So auto precharge is possible.
2.
About the valid DQs after burst stop, it is same as the case of RAS# interrupt.
Both cases are illustrated in above timing diagram. See the label 1, 2.
But at burst write, Burst stop and RAS# interrupt should be compared carefully.
Refer to the timing diagram of "Full page write burst stop cycle."
3.
Burst stop is valid at every burst length.
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