參數(shù)資料
型號: W986416BH-7
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 INCH, 0.80 MM PITCH, TSOP2-54
文件頁數(shù): 41/42頁
文件大?。?/td> 2061K
代理商: W986416BH-7
W986416BH
1M x 16 bit x 4 Banks SDRAM
Revision 1.4
Publication Release Date: July, 1999
- 8 -
NOTES:
1. Operation exceeds "ABSOLUTE MAXIMUM RATING" may cause permanent damage to the devices.
2. All voltages are referenced to VSS
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the minimum values of
tCK and tRC.
4. These parameters depend on the output loading conditions. Specified values are obtained with output open.
5. Power up sequence is further described in the "Functional Description" section.
6. AC TESTING CONDITIONS
Output Reference Level
1.4V/1.4V
Output Load
W986416BH is tested with 50pF output load.
(See diagram below)
Input Signal Levels
2.4V/0.4V
Transition Time (Rise and Fall) of Input Signal
2ns
Input Reference Level
1.4V
7. Transition times are measured between VIH and VIL.
8. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to output level.
1.4 V
output
Z=50 ohms
AC TEST LOAD
50 ohms
50 pF
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