參數(shù)資料
型號: W986416BH-7
廠商: WINBOND ELECTRONICS CORP
元件分類: DRAM
英文描述: 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 INCH, 0.80 MM PITCH, TSOP2-54
文件頁數(shù): 23/42頁
文件大?。?/td> 2061K
代理商: W986416BH-7
W986416BH
1M x 16 bit x 4 Banks SDRAM
Revision 1.4
Publication Release Date: July, 1999
- 3 -
Pin Assignment
Pin Number
Pin Name
Function
Description
23 ~ 26, 22,
29 ~35
A0~ A11
Address
Multiplexed pins for row and column address.
Row address : A0 ~ A11. Column address: A0 ~ A7.
20, 21
BS0, BS1
Bank Select
Select bank to activate during row address latch time, or bank to
read/write during address latch time.
2, 4, 5, 7, 8,
10, 11, 13,
42, 44, 45,
47, 48, 50,
51, 53
DQ0 ~
DQ15
Data Input/
Output
Multiplexed pins for data output and input.
19
CS#
Chip Select
Disable or enable the command decoder. When command
decoder is disabled, new command is ignored and previous
operation continues.
18
RAS#
Row Address
Strobe
Command input. When sampled at the rising edge of the clock,
RAS#, CAS# and WE# define the operation to be executed.
17
CAS#
Column
Address Strobe
Referred to RAS#
16
WE#
Write Enable
Referred to RAS#
39, 15
UDQM/
LDQM
input/output
mask
The output buffer is placed at Hi-Z(with latency of 2) when DQM
is sampled high in read cycle. In write cycle, sampling DQM
high will block the write operation with zero latency.
38
CLK
Clock Inputs
System clock used to sample inputs on the rising edge of clock.
37
CKE
Clock Enable
CKE controls the clock activation and deactivation. When CKE
is low, Power Down mode, Suspend mode, or Self Refresh
mode is entered.
1, 14, 27
VCC
Power ( +3.3 V )
Power for input buffers and logic circuit inside DRAM.
28, 41, 54
VSS
Ground
Ground for input buffers and logic circuit inside DRAM.
3, 9, 43, 49
VCCQ
Power ( + 3.3 V
) for I/O buffer
Separated power from VCC, used for output buffers to improve
noise.
6, 12, 46, 52
VSSQ
Ground for I/O
buffer
Separated ground from VSS, used for output buffers to improve
noise.
36, 40
NC
No Connection
No connection
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