參數(shù)資料
型號： W9812G21H-6I
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
封裝： 0.400 INCH, ROHS COMPLIANT, TSOP2-86
文件頁數(shù)： 23/36頁
文件大小： 1422K
代理商： W9812G21H-6I
W9812G2IH
Publication Release Date:Nov. 06, 2008
- 3 -
Revision A01
1
GENERAL DESCRIPTION
W9812G2IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
1,048,576 words
× 4 banks × 32 bits. W9812G2IH delivers a data bandwidth of up to 166M words per
second (-6). For different application, W9812G2IH is sorted into following speed grades: -6C, -6, -6I
and -75. The -6C/-6/-6I is compliant to the 166MHz/CL3 specification. (The speed grade of -6C
supports tRP=16nS, tRCD=16nS, tRC=48nS, tAC=4.5nS, tIH=0.8nS and the -6I speed grade which is
guaranteed to support -40°C ~ 85°C.) The -75 is compliant to the 133MHz/CL3 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9812G2IH is ideal for main memory in
high performance applications.
2
FEATURES
3.3V ± 0.3V Power Supply
Up to 166 MHz Clock Frequency
1,048,576 Words
× 4 banks × 32 bits organization
Self Refresh Mode
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and full page
Burst Read, Single Writes Mode
Byte Data Controlled by DQM0-3
Auto-precharge and Controlled Precharge
4K Refresh cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant
3
AVAILABLE PART NUMBER
PART NUMBER
SPEED
MAXIMUM SELF
REFRESH CURRENT
OPERATING
TEMPERATURE
W9812G2IH-6C
166MHz/CL3
2mA
0°C ~ 70°C
W9812G2IH-6
166MHz/CL3
2mA
0°C ~ 70°C
W9812G2IH-6I
166MHz/CL3
2mA
-40°C ~ 85°C
W9812G2IH-75
133MHz/CL3
2mA
0°C ~ 70°C
相關PDF資料
PDF描述
W9812G21H-6C 4M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86
W9812G6JH-6 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
W986416AH-10 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54
W986432DH-6 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
W986432DH-8 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
相關代理商/技術參數(shù)
參數(shù)描述
W9812G2GB 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM
W9812G2GB-6 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM
W9812G2GB-6I 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM
W9812G2GB-75 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM
W9812G2GH 制造商:WINBOND 制造商全稱:Winbond 功能描述:a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words 】 4 banks 】 32 bits
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