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| 型號： | W78M64110SBC |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | PROM |
| 英文描述： | 8M X 64 FLASH 3.3V PROM, 110 ns, PBGA159 |
| 封裝： | 13 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-159 |
| 文件頁數(shù)： | 21/50頁 |
| 文件大?。?/td> | 1679K |
| 代理商： | W78M64110SBC |
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White Electronic Designs
W78M64VP-XSBX
White Electronic Designs Corp. reserves the right to change products or specications without notice.
28
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
November 2009
2010 White Electronic Designs Corp. All rights reserved
Rev. 10
TABLE 38 ERASE AND PROGRAMMING PERFORMANCE
VCC = 3.3V ± 0.3V, -55°C ≤ TA ≤ +125°C
Parameter
Typ
(Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming prior to erasure
(Note 4)
Chip Erase Time
64
256
sec
Total Write Buffer Time (Note 3)
480
μs
Excludes system level overhead (Note 5)
Total Accelerated Write Buffer Programming Time (Note 3)
432
μs
Ship Program Time
123
sec
Notes
1. Typical program and erase times assume the following conditions: 25C, 3.6V VCC, 10,000 cycles, checker board pattern.
2. Under corst case conditions of -40C, VCC = 3.0V, 100,000 cycle.
3. Effective write buffer specication is based upon 32-word write buffer operation.
4. In the pre-programming step of the embedded erase algorithm, all bits are programmed to 00H before erasure.
5. System0level overhead is the time required to execute the two-or four-bus-cycle sequence for the program command. See table 38 and 39.
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