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參數(shù)資料
| 型號： | W3H32M72E-667SBC |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.65 ns, PBGA208 |
| 封裝： | 18 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 19/31頁 |
| 文件大小： | 873K |
| 代理商： | W3H32M72E-667SBC |
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W3H32M72E-XSBX
26
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2009
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
AC TIMING PARAMETERS
(continued)
-55°C ≤ TA < +125°C; VCCQ = + 1.8V ± 0.1V, VCC = +1.8V ± 0.1V
Parameter
Symbol
667Mbs CL5
533Mbs CL4
400Mbs CL3
Unit
Min
Max
Min
Max
Min
Max
Command
and
Address
Address and control input pulse width for each
input
tIPW
0.6
tCK
Address and control input setup time
tISa
400
500
600
ps
tISb
200
250
350
ps
Address and control input hold time
tIHa
400
500
600
ps
tIHb
275
375
475
ps
CAS# to CAS# command delay
tCCD
222
tCK
ACTIVE to ACTIVE (same bank) command
tRC
55
ns
ACTIVE bank a to ACTIVE bank b command
tRRD
10
ns
ACTIVE to READ or WRITE delay
tRCD
15
ns
Four Bank Activate period
tFAW
50
ns
ACTIVE to PRECHARGE command
tRAS
40
70,000
40
70,000
40
70,000
ns
Internal READ to precharge command delay
tRTP
7.5
ns
Write recovery time
tWR
15
ns
Auto precharge write recovery + precharge time
tDAL
tWR + tRP
ns
Internal WRITE to READ command delay
tWTR
7.5
10
ns
PRECHARGE command period
tRP
15
ns
PRECHARGE ALL command period
tRPA
tRP + tCK
ns
LOAD MODE command cycle time
tMRD
222
tCK
CKE low to CK, CK# uncertainty
tDELAY
tIS +tIH + tCK
ns
Refresh
REFRESH to Active or Refresh to Refresh
command interval
tRFC
105
70,000
105
70,000
105
70,000
ns
Average periodic refresh interval
(Comm + Ind Temp)
tREFI
7.8
μs
Average periodic refresh interval (Military Temp)
tREFI
1.9
μs
Self
Refresh
Exit self refresh to non-READ command
tXSNR
tRFC(MIN) +
10
tRFC(MIN) +
10
tRFC(MIN) +
10
ns
Exit self refresh to READ
tXSRD
200
tCK
Exit self refresh timing reference
tlSXR
tIS
ps
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3H64M16E-400BC | 64M X 16 DDR DRAM, 0.6 ns, PBGA79 |
| W3H64M64E-400SBC | 64M X 64 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-533ES | 64M X 72 DDR DRAM, 0.5 ns, PBGA208 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H32M72E-667SBI | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 667MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk |
| W3H32M72E-667SBM | 制造商:PMG/Microsemi 功能描述: |
| W3H32M72E-ES | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M72E-ESC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M72E-ESI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
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