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參數(shù)資料
| 型號： | W3H32M72E-667SBC |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 32M X 72 DDR DRAM, 0.65 ns, PBGA208 |
| 封裝： | 18 X 20 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 1/31頁 |
| 文件大?。?/td> | 873K |
| 代理商： | W3H32M72E-667SBC |
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W3H32M72E-XSBX
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2009
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667, 533, 400
Package:
208 Plastic Ball Grid Array (PBGA), 18 x 20mm
1.0mm pitch
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Four internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Single 1.8V ±0.1V supply
Programmable CAS latency: 3, 4, 5, or 6
Posted CAS additive latency: 0, 1, 2, 3 or 4
Write latency = Read latency - 1* tCK
Commercial, Industrial and Military Temperature
Ranges
Organized as 32M x 72
Weight: W3H32M72E-XSBX - 2.5 grams typical
BENEFITS
65% SPACE SAVINGS vs. FPBGA
Reduced part count
54% I/O reduction vs FPBGA
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Upgradable to 64M x 72 density (contact factory for
information)
* This product is subject to change without notice.
Area
5 x 209mm2 = 1,045mm2
360mm2
65%
5 x 90 balls = 450 balls
208 Balls
54%
S
A
V
I
N
G
S
I/O
Count
Actual Size
W3H32M72E-XSBX
CSP Approach (mm)
90
FBGA
11.0
19.0
20
18
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
90
FBGA
11.0
FIGURE 1 – DENSITY COMPARISONS
White Electronic Designs
W3H32M72E-XSBX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3H64M16E-400BC | 64M X 16 DDR DRAM, 0.6 ns, PBGA79 |
| W3H64M64E-400SBC | 64M X 64 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-533ES | 64M X 72 DDR DRAM, 0.5 ns, PBGA208 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H32M72E-667SBI | 制造商:Microsemi Corporation 功能描述:32M X 72 DDR2, 1.8V, 667MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk |
| W3H32M72E-667SBM | 制造商:PMG/Microsemi 功能描述: |
| W3H32M72E-ES | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M72E-ESC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
| W3H32M72E-ESI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:32M x 72 DDR2 SDRAM 208 PBGA Multi-Chip Package |
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