- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄68457 > W3H64M64E-400SBC (MICROSEMI CORP-PMG MICROELECTRONICS) 64M X 64 DDR DRAM, 0.6 ns, PBGA208 PDF資料下載
參數(shù)資料
| 型號： | W3H64M64E-400SBC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM, 0.6 ns, PBGA208 |
| 封裝： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 1/32頁 |
| 文件大小： | 928K |
| 代理商： | W3H64M64E-400SBC |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁
W3H64M64E-XSBX
ADVANCED*
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2009
Rev. 4
White Electronic Designs Corp. reserves the right to change products or specications without notice.
64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package
FEATURES
Data rate = 667, 533, 400
Package:
208 Plastic Ball Grid Array (PBGA), 16 x 22mm
1.0mm pitch
Supply Voltage = 1.8V ± 0.1V
Differential data strobe (DQS, DQS#) per byte
Internal, pipelined, double data rate architecture
4-bit prefetch architecture
DLL for alignment of DQ and DQS transitions with
clock signal
Eight internal banks for concurrent operation
(Per DDR2 SDRAM Die)
Programmable Burst lengths: 4 or 8
Auto Refresh and Self Refresh Modes
On Die Termination (ODT)
Adjustable data – output drive strength
Programmable CAS latency: 3, 4, 5, or 6
Posted CAS additive latency: 0, 1, 2, 3 or 4
VCCQ is common to VCC
Write latency = Read latency - 1* tCK
Commercial, Industrial and Military Temperature
Ranges
Organized as 64M x 64
Weight: W3H64M64E-XSBX - 2.5 grams typical
BENEFITS
58% Space Savings vs. FBGA
Reduced part count
43% I/O reduction vs FBGA
Reduced trace lengths for lower parasitic
capacitance
Suitable for hi-reliability applications
Upgradeable to 128M x 64 density (contact factory
for information)
* This product is subject to change without notice.
Area
4 x 100mm2 = 400mm2
352mm2
13%
4 x 84 balls = 368 balls
208 Balls
33%
S
A
V
I
N
G
S
I/O
Count
Actual Size
W3H64M64E-XSBX
CSP Approach (mm)
92
FBGA
8
12
22
16
92
FBGA
8
92
FBGA
8
92
FBGA
8
FIGURE 1 – DENSITY COMPARISONS
White
Electronic
Designs
W3H64M64E-XSBX
相關PDF資料 |
PDF描述 |
|---|---|
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-533ES | 64M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| W3H64M72E-ESM | 64M X 72 DDR DRAM, PBGA208 |
| W3H64M72E-SBC | 64M X 72 DDR DRAM, PBGA208 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W3H64M64E-400SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-400SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-533SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H64M64E-533SBI | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk |
| W3H64M64E-533SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA MIL-TEMP. - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。