參數(shù)資料
型號(hào): W3H64M64E-400SBC
廠商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分類: DRAM
英文描述: 64M X 64 DDR DRAM, 0.6 ns, PBGA208
封裝: 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208
文件頁(yè)數(shù): 30/32頁(yè)
文件大小: 928K
代理商: W3H64M64E-400SBC
W3H64M64E-XSBX
7
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2009
Rev. 4
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
tVTD 1
CKE
RTT
Power-up:
V CC and stable
clock (CK, CK#)
T = 200s (MIN) 3
High-Z
DM
7
DQS
7
High-Z
Address
9
CK
CK#
tCL
V TT1
V REF
Command
NOP 3
PRE
T0
Ta0
Don’t care
tCL
tCK
V CC
ODT
DQ
7
High-Z
Tb0
MR with
200 cycles of CK3
DLL RESET
tRFC
LM 8
PRE 9
LM 7
REF 10
LM 11
Tg0
Th0
Ti0
Tj0
MR without
DLL RESET
EMR with
OCD default
Tk0
Tl0
Tm0
Te0
Tf0
EMR(2)
EMR(3)
tMRD
LM 6
LM 5
A10 = 1
tRPA
Tc0
Td0
SSTL_18
low level
8
Valid 14
Valid
Indicates a Break in
Time Scale
LM 12
EMR with
OCD exit
LM 13
Normal
operation
Code
A10 = 1
Code
tMRD
tRPA
tRFC
V CCQ
tMRD
See note 4
EMR with
DLL ENABLE
T = 400ns (MIN) 4
LVCMOS
low level 8
FIGURE 4 – POWER-UP AND INITIALIZATION
Notes appear on page 7
相關(guān)PDF資料
PDF描述
W3H64M72E-400ESI 64M X 72 DDR DRAM, 0.6 ns, PBGA208
W3H64M72E-400ESI 64M X 72 DDR DRAM, 0.6 ns, PBGA208
W3H64M72E-533ES 64M X 72 DDR DRAM, 0.5 ns, PBGA208
W3H64M72E-ESM 64M X 72 DDR DRAM, PBGA208
W3H64M72E-SBC 64M X 72 DDR DRAM, PBGA208
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3H64M64E-400SBI 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY
W3H64M64E-400SBM 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY
W3H64M64E-533SBC 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk
W3H64M64E-533SBI 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk
W3H64M64E-533SBM 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA MIL-TEMP. - Bulk