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參數(shù)資料
| 型號(hào)： | W3H64M64E-400SBC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM, 0.6 ns, PBGA208 |
| 封裝： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 15/32頁 |
| 文件大小： | 928K |
| 代理商： | W3H64M64E-400SBC |
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W3H64M64E-XSBX
22
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2009
Rev. 4
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
TABLE 5 – DC OPERATING CONDITIONS
All voltages referenced to VSS
Parameter
Symbol
Min
Typical
Max
Unit
Notes
Supply voltage
VCC
1 .7
1 .8
1 .9
V
1
I/O Reference voltage
VREF
0.49 x VCC
0.50 x VCC
0.51 x VCC
V1
I/O Termination voltage
VTT
VREF-0.04
VREF
VREF + 0.04
V
2
Notes:
1.
VREF is expected to equal VCC/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed ±1 percent of the DC
value. Peak-to-peak AC noise on VREF may not exceed ±2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
2.
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
TABLE 6 – ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
MIN
MAX
U nit
VCC/ VCCQ
Voltage on VCC pin relative to VSS
-1.0
2.3
V
VIN, VOUT
Voltage on any pin relative to VSS
-0.5
2.3
V
TSTG
Storage temperature
-55
125
°C
IL
Input leakage current; Any input 0V<VIN<VCC; VREF input 0V<VIN<0.95V; Other pins
not under test = 0V
-20
20
μA
———
-—
—
IOZ
Output leakage current;
0V<VOUT<VCC; DQs and ODT are disable
-5
5
μA
IVREF
VREF leakage current; VREF = Valid VREF level
-8
8
μA
TABLE 7 – INPUT/OUTPUT CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 1.8V
Parameter
Symbol
Max
Unit
Input capacitance (A0 - A12, BA0 - BA2 ,CS#, RAS#,CAS#,WE#, CKE, ODT)
CIN1
21
pF
Input capacitance CK, CK#
CIN2
5.5
pF
Input capacitance DM, DQS, DQS#
CIN3
8pF
Input capacitance DQ0 - 71
COUT
8pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H64M64E-400SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-400SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-533SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H64M64E-533SBI | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk |
| W3H64M64E-533SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA MIL-TEMP. - Bulk |
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