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參數(shù)資料
| 型號(hào)： | W3H64M64E-400SBC |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | DRAM |
| 英文描述： | 64M X 64 DDR DRAM, 0.6 ns, PBGA208 |
| 封裝： | 16 X 22 MM, 1 MM PITCH, PLASTIC, BGA-208 |
| 文件頁數(shù)： | 25/32頁 |
| 文件大?。?/td> | 928K |
| 代理商： | W3H64M64E-400SBC |
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W3H64M64E-XSBX
31
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
March 2009
Rev. 4
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
Document Title
64M x 64 DDR2 SDRAM 208 PBGA Multi-Chip Package
Revision History
Rev #
History
Release Date
Status
Rev 0
Initial Release
February 2007
Advanced
Rev 1
Changes (Pg. Multiple)
1.1 Update package size to 16mm x 22mm
1.2 Add references to BA2, ball E5
1.3 Correct typo on IC1 block diagram, ODT function
1.4 Add notes on A14 and A15 ball locations for future use
1.5 Update block diagram and ball pattern with respect to CS#,
RASH#, CAS#, WE# and CKE connections.
March 2007
Advanced
Rev 2
Changes (Pg. All)
2.1 Update status to Final
2.2 Add 667Mb/s CL6 timing data
2.3 Add thermal resistance data
April 2008
Final
Rev 3
Changes (Pg. 2, 3, 5, 6, 7, 8, 22, 23, 25, 26, 27, 28)
3.1 Update block diagram and ball pattern with respect to CS#,
RASH#, CAS#, WE# and CKE connections
3.2 Pins D#, D4, C6, B7, C7 are NC and pins T8 = CKE#, T9 =
WE#, U5 = RAS#, U6 = CAS# and V5 = CS#
3.3 Symbol box remove VCCQ; add note: VCCQ ins common to
VCC
3.4 Remove q from VCCQ: (VCCQ is common to VCC)
3.5 Remove all references to VCCQ
3.6 Remove VCCq signal trace
3.7 Remove I/O supply voltage/VCCQ and notes (1) referencing
VCCq, note (4) VCCq tracks with VCC.
3.8 Remove VCCQ from table 6, and VCCq from output leakage
voltage
3.9 In table 10; remove VCCQ and VCCq from measure voltage
3.10 Remove reference VCCQ = 1.8V ±0.1V from pages 25, 26,
27, 28.
September 2008
Final
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-533ES | 64M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| W3H64M72E-ESM | 64M X 72 DDR DRAM, PBGA208 |
| W3H64M72E-SBC | 64M X 72 DDR DRAM, PBGA208 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W3H64M64E-400SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-400SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-533SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H64M64E-533SBI | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA INDUSTRIAL TEMP. - Bulk |
| W3H64M64E-533SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA MIL-TEMP. - Bulk |
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