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參數(shù)資料
| 型號： | W3E64M72S-266BI |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 64M X 72 SYNCHRONOUS DRAM, 0.75 ns, PBGA219 |
| 封裝： | 25 X 32 MM, PLASTIC, BGA-219 |
| 文件頁數(shù)： | 4/19頁 |
| 文件大?。?/td> | 674K |
| 代理商： | W3E64M72S-266BI |
W3E64M72S-XBX
12
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
June 2005
Rev. 0
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1-5, 16)
VCC, VCCQ = +2.5V ± 0.2V; -55°C
≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage (36, 41)
VCC
2.3
2.7
V
I/O Supply Voltage (36, 41, 44)
VCCQ
2.3
2.7
V
Input Leakage Current: Any one input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-2
2
A
Input Leakage Address Current (All other pins not under test = 0V)
II
-18
18
A
Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCCQ
IOZ
-5
5
A
Output Levels: Full drive option (37, 39)
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOH
-12-mA
IOL
12
-
mA
I/O Reference Voltage (6,44)
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage (7, 44)
VTT
VREF - 0.04
VREF + 0.04
V
AC INPUT OPERATING CONDITIONS
VCC, VCCQ = +2.5V ± 0.2V; -55°C
≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Input High (Logic 1) Voltage
VIH
VREF +0.500
—
V
Input Low (Logic 0) Voltage
VIL
—VREF -0.500
V
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W3E64M72S-266BM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
| W3E64M72S-266ESC | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
| W3E64M72S-266ESI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
| W3E64M72S-266ESM | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
| W3E64M72S-266SBC | 制造商:Microsemi Corporation 功能描述:64M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
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