參數(shù)資料
型號: W3E64M72S-266BI
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 64M X 72 SYNCHRONOUS DRAM, 0.75 ns, PBGA219
封裝: 25 X 32 MM, PLASTIC, BGA-219
文件頁數(shù): 16/19頁
文件大小: 674K
代理商: W3E64M72S-266BI
W3E64M72S-XBX
6
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
June 2005
Rev. 0
ADVANCED
White Electronic Designs Corp. reserves the right to change products or specications without notice.
BURST TYPE
Accesses within a given burst may be programmed to be
either sequential or interleaved; this is referred to as the
burst type and is selected via bit M3.
The ordering of accesses within a burst is determined by
the burst length, the burst type and the starting column
address, as shown in Table 1.
READ LATENCY
The READ latency is the delay, in clock cycles, between
the registration of a READ command and the availability
of the rst bit of output data. The latency can be set to 2,
2.5, or 3 clocks.
If a READ command is registered at clock edge n, and the
latency is m clocks, the data will be available by clock edge
n+m. Table 2 below indicates the operating frequencies at
which each CAS latency setting can be used.
Reserved states should not be used as unknown operation
or incompatibility with future versions may result.
OPERATING MODE
The normal operating mode is selected by issuing a MODE
REGISTER SET command with bits A7-A12 each set to
zero, and bits A0-A6 set to the desired values. A DLL reset
is initiated by issuing a MODE REGISTER SET command
with bits A7 and A9-A12 each set to zero, bit A8 set to one,
and bits A0-A6 set to the desired values. Although not
required, JEDEC specications recommend when a LOAD
MODE REGISTER command is issued to reset the DLL, it
should always be followed by a LOAD MODE REGISTER
command to select normal operating mode.
All other combinations of values for A7-A12 are reserved
for future use and/or test modes. Test modes and reserved
states should not be used because unknown operation or
incompatibility with future versions may result.
EXTENDED MODE REGISTER
The extended mode register controls functions beyond
those controlled by the mode register; these additional
functions are DLL enable/disable, output drive strength,
and QFC. These functions are controlled via the bits shown
in Figure 5. The extended mode register is programmed
via the LOAD MODE REGISTER command to the mode
register (with BA0 = 1 and BA1 = 0) and will retain the
stored information until it is programmed again or the
device loses power. The enabling of the DLL should always
be followed by a LOAD MODE REGISTER command to the
mode register (BA0/BA1 both LOW) to reset the DLL.
The extended mode register must be loaded when all
banks are idle and no bursts are in progress, and the
controller must wait the specied time before initiating
any subsequent operation. Violating either of these
requirements could result in unspecied operation.
TABLE 2 – CAS LATENCY
ALLOWABLE OPERATING FREQUENCY (MHz)
SPEED
CAS LATENCY = 2 CAS LATENCY = 2.5 CAS LATENCY = 3
-200
≤ 75
≤ 100
-250
≤ 100
≤ 125
-266
≤ 100
≤ 133
-333*
≤ 100
≤ 133/≤ 166
≤ 166
* For 333Mbs operation of Industrial and commercial temperatures CL = 2.5, at Military
temperature CL = 3.
OUTPUT DRIVE STRENGTH
The normal full drive strength for all outputs are specied
to be SSTL2, Class II.
DLL ENABLE/DISABLE
When the part is running without the DLL enabled, device
functionality may be altered. The DLL must be enabled for
normal operation. DLL enable is required during power-
up initialization and upon returning to normal operation
after having disabled the DLL for the purpose of debug or
evaluation. (When the device exits self refresh mode, the
DLL is enabled automatically.) Any time the DLL is enabled,
200 clock cycles with CKE high must occur before a READ
command can be issued.
相關(guān)PDF資料
PDF描述
W3HG2128M72EER534D4SG 256M X 72 MULTI DEVICE DRAM MODULE, ZMA200
WMS512K8-25CQ 512K X 8 STANDARD SRAM, 25 ns, CDIP32
WF2M32S-80HC 8M X 8 FLASH 5V PROM MODULE, 80 ns, CHIP66
WS512K32F-17H2M 2M X 8 MULTI DEVICE SRAM MODULE, 17 ns, CHMA66
WS512K32F-17H2QA 2M X 8 MULTI DEVICE SRAM MODULE, 17 ns, CHMA66
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W3E64M72S-266BM 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM
W3E64M72S-266ESC 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM
W3E64M72S-266ESI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM
W3E64M72S-266ESM 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM
W3E64M72S-266SBC 制造商:Microsemi Corporation 功能描述:64M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk