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參數(shù)資料
| 型號： | W25Q40BWSNIP |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 3.81 MM, GREEN, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 41/70頁 |
| 文件大?。?/td> | 2088K |
| 代理商： | W25Q40BWSNIP |
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W25Q40BW
- 46 -
8.2.29 Power-down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further
reduced with the Power-down instruction. The lower power consumption makes the Power-down
instruction especially useful for battery powered applications (See ICC1 and ICC2 in AC Characteristics).
The instruction is initiated by driving the /CS pin low and shifting the instruction code “B9h” as shown in
figure 27.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Power-down
instruction will not be executed. After /CS is driven high, the power-down state will entered within the time
duration of tDP (See AC Characteristics). While in the power-down state only the Release from Power-
down / Device ID instruction, which restores the device to normal operation, will be recognized. All other
instructions are ignored. This includes the Read Status Register instruction, which is always available
during normal operation. Ignoring all but one instruction makes the Power Down state a useful condition
for securing maximum write protection. The device always powers-up in the normal operation with the
standby current of ICC1.
Figure 27. Deep Power-down Instruction Sequence Diagram
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| W25Q64CVZPAG | 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q64CVZEAG | 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q64CVDAIG | 64M X 1 SPI BUS SERIAL EEPROM, PDIP8 |
| W25Q64DWZPIP | 256K X 32 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q40BWSSIG | 功能描述:IC FLASH SPI 4MBIT 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應商設備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| W25Q40BWSSIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 4MBIT 80MHZ 8SOIC |
| W25Q40BWUXIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q40BWUXIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q40BWZPIG | 功能描述:IC FLASH SPI 4MBIT 8WSON RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應商設備封裝:8-MSOP 包裝:帶卷 (TR) |
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