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W25Q40BW

- 44 -

8.2.27 Erase / Program Suspend (75h)

The Erase/Program Suspend instruction “75h”, allows the system to interrupt a Sector or Block Erase

operation or a Page Program operation and then read from or program/erase data to, any other sectors

or blocks. The Erase/Program Suspend instruction sequence is shown in figure 25.

The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h) are not

allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If

written during the Chip Erase operation, the Erase Suspend instruction is ignored. The Write Status

Suspend. Program Suspend is valid only during the Page Program or Quad Page Program operation.

The Erase/Program Suspend instruction “75h” will be accepted by the device only if the SUS bit in the

Status Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase or a Page

Program operation is on-going. If the SUS bit equals to 1 or the BUSY bit equals to 0, the Suspend

instruction will be ignored by the device. A maximum of time of “tSUS” (See AC Characteristics) is required

to suspend the erase or program operation. The BUSY bit in the Status Register will be cleared from 1 to

0 within “tSUS” and the SUS bit in the Status Register will be set from 0 to 1 immediately after

Erase/Program Suspend. For a previously resumed Erase/Program operation, it is also required that the

Suspend instruction “75h” is not issued earlier than a minimum of time of “tSUS” following the preceding

Resume instruction “7Ah”.

Unexpected power off during the Erase/Program suspend state will reset the device and release the

suspend state. SUS bit in the Status Register will also reset to 0. The data within the page, sector or

block that was being suspended may become corrupted. It is recommended for the user to implement

system design techniques against the accidental power interruption and preserve data integrity during

erase/program suspend state.

Figure 25. Erase/Program Suspend Instruction Sequence

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相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
W25Q40BWSSIG	功能描述:IC FLASH SPI 4MBIT 8SOIC RoHS:是類別:集成電路 (IC) >> 存儲(chǔ)器系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步存儲(chǔ)容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬）供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8
W25Q40BWSSIG TR	制造商:Winbond Electronics Corp 功能描述:IC FLASH 4MBIT 80MHZ 8SOIC
W25Q40BWUXIG	制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q40BWUXIP	制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
W25Q40BWZPIG	功能描述:IC FLASH SPI 4MBIT 8WSON RoHS:是類別:集成電路 (IC) >> 存儲(chǔ)器系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線）電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬）供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)

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