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參數(shù)資料
| 型號： | W25Q40BWSNIP |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 4M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 3.81 MM, GREEN, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 35/70頁 |
| 文件大?。?/td> | 2088K |
| 代理商： | W25Q40BWSNIP |
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W25Q40BW
- 40 -
8.2.23 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of all
1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in figure 21.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of tSE (See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status of
the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB,
BP2, BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 21. Sector Erase Instruction Sequence Diagram
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PDF描述 |
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| W25Q64CVZEAG | 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q64CVDAIG | 64M X 1 SPI BUS SERIAL EEPROM, PDIP8 |
| W25Q64DWZPIP | 256K X 32 SPI BUS SERIAL EEPROM, 7.5 ns, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| W25Q40BWSSIG | 功能描述:IC FLASH SPI 4MBIT 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| W25Q40BWSSIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 4MBIT 80MHZ 8SOIC |
| W25Q40BWUXIG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q40BWUXIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q40BWZPIG | 功能描述:IC FLASH SPI 4MBIT 8WSON RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR) |
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