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參數資料
| 型號： | W25Q32BVSSAP |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | PROM |
| 英文描述： | 32M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.208 INCH, GREEN, SOIC-8 |
| 文件頁數： | 20/79頁 |
| 文件大小： | 1090K |
| 代理商： | W25Q32BVSSAP |
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W25Q32BV
Publication Release Date: April 01, 2011
- 27 -
Revision F
DO
(IO
1)
7.2.10 Read Data (03h)
The Read Data instruction allows one or more data bytes to be sequentially read from the memory. The
instruction is initiated by driving the /CS pin low and then shifting the instruction code “03h” followed by a
24-bit address (A23-A0) into the DI pin. The code and address bits are latched on the rising edge of the
CLK pin. After the address is received, the data byte of the addressed memory location will be shifted out
on the DO pin at the falling edge of CLK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after each byte of data is shifted out allowing for a continuous
stream of data. This means that the entire memory can be accessed with a single instruction as long as
the clock continues. The instruction is completed by driving /CS high.
The Read Data instruction sequence is shown in Figure 9. If a Read Data instruction is issued while an
Erase, Program or Write cycle is in process (BUSY=1) the instruction is ignored and will not have any
effects on the current cycle. The Read Data instruction allows clock rates from D.C. to a maximum of fR
(see AC Electrical Characteristics).
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (03h)
High Impedance
8
9
10
28
29
30
31
32
33
34
35
36
37
38
39
7
6
5
4
3
2
1
0
7
24-Bit Address
23
22
21
3
2
1
0
Data Out 1
*
= MSB
*
Figure 9. Read Data Instruction Sequence Diagram
相關PDF資料 |
PDF描述 |
|---|---|
| W25Q32BWSNIP | 4M X 8 SPI BUS SERIAL EEPROM, DSO8 |
| W25Q32BWSSIG | 4M X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q40BWSNIP | 4M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q64BVSSIP | 8M X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| W25Q64CVZPAG | 64M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| W25Q32BVSSIG | 功能描述:IC SPI FLASH 32MBIT 8SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:SpiFlash® 標準包裝:1,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應商設備封裝:8-MFP 包裝:帶卷 (TR) |
| W25Q32BVSSIG TR | 制造商:Winbond Electronics Corp 功能描述:SPIFLASH, 32M-BIT, 4KB UNIFORM |
| W25Q32BVSSIP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q32BVTCAG | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q32BVTCAP | 制造商:WINBOND 制造商全稱:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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