參數(shù)資料
型號: W25Q128BVFAP
廠商: WINBOND ELECTRONICS CORP
元件分類: PROM
英文描述: 128M X 1 SPI BUS SERIAL EEPROM, PDSO16
封裝: 0.300 INCH, GREEN, SOIC-16
文件頁數(shù): 42/74頁
文件大?。?/td> 855K
代理商: W25Q128BVFAP
W25Q128BV
Publication Release Date: April 01, 2011
- 47 -
Revision E
7.2.28 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction “7Ah”
will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY bit
equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set from
0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the
program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah”
will be ignored by the device. The Erase/Program Resume instruction sequence is shown in Figure 26.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “tSUS” following a previous Resume instruction.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (7Ah)
Mode 0
Mode 3
Resume previously
suspended Program or
Erase
Figure 26. Erase/Program Resume Instruction Sequence
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