參數(shù)資料
型號(hào): VG36128161BFL-7H
廠商: VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
元件分類(lèi): DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
封裝: 10 X 9 MM, VFBGA-54
文件頁(yè)數(shù): 18/69頁(yè)
文件大小: 1335K
代理商: VG36128161BFL-7H
Document :1G5-0183
Rev.5
Page 25
VIS
VG36128401B / VG36128801B / VG36128161B
CMOS Synchronous Dynamic RAM
10.2 PRECHARGE TERMINATION
10.2.1 PRECHARGE TERMINATION in READ Cycle
During READ cycle, the burst read operation is terminated by a precharge command.
When the precharge command is issued, the burst read operation is terminated and precharge starts.
The same bank can be activated again after tRP from the precharge command.
When CAS latency is 2, the read data will remain valid until one clock after the precharge command.
When CAS latency is 3, the read data will remain valid until two clocks after the precharge command.
Precharge Termination in READ Cycle
Burst lengh= X
CLK
Command
CAS latency=2
DQ
Hi-Z
Read
T0
T1
T2
T3
T4
T5
T6
T7
T8
PRE
ACT
DQ
Read
PRE
ACT
tRP
CAS latency=3
Q0
Q3
Q2
Q1
Hi-Z
Q0
Q3
Q2
Q1
command
tRP
相關(guān)PDF資料
PDF描述
VG36128161BT-7H 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
VG36128161BFL-7L 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
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VG36128161BT 制造商:VML 制造商全稱(chēng):VML 功能描述:CMOS Synchronous Dynamic RAM
VG36128401A 制造商:VML 制造商全稱(chēng):VML 功能描述:CMOS Synchronous Dynamic RAM
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VG36128801BT 制造商:VML 制造商全稱(chēng):VML 功能描述:CMOS Synchronous Dynamic RAM