參數(shù)資料
型號: UR5596
廠商: 友順科技股份有限公司
英文描述: MOS IC
中文描述: 馬鞍山集成電路
文件頁數(shù): 8/11頁
文件大?。?/td> 207K
代理商: UR5596
UR5596
MOS IC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-045,A
8
FOR DDR-II APPLICATIONS
As a result of the separate V
DDQ
pin and an internal resistor divider,
UR5596
can be utilized in DDR-II system,
figure 5 and 6 show two recommended circuits in DDR-II SDRAM application. The output stage is connected to the
1.8V rail and the AV
IN
pin can be connected to either a 3.3V or 5V rail. If it is not desirable to use the 1.8V rail it is
possible to connect the output stage to a 3.3V rail. The power dissipation increasing concern must be careful as well
SSTL-II application. The advantage of configuration of figure 6 is that it has the ability to source and sink a higher
maximum continuous current.
+
+
+
V
TT
V
DDQ
V
SENSE
V
REF
GND
SHDN
AV
IN
PV
IN
C
IN
SHDN
V
DDQ
=1.8V
AV
IN
=2.2V
5.5V
C
OUT
C
REF
V
REF
=0.9V
V
TT
=0.9V
UTC UR5596
PV
IN
=1.8V
Figure 5. Recommended DDR-II Termination
+
+
+
V
TT
V
DDQ
V
SENSE
V
REF
GND
SHDN
AV
IN
PV
IN
C
IN
SHDN
V
DDQ
=1.8V
AV
IN
=3.3V or 5.5V
C
OUT
C
REF
V
REF
=0.9V
V
TT
=0.9V
UTC UR5596
PV
IN
=3.3V
Figure 6. DDR-II Termination with higher voltage rails
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