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參數(shù)資料
| 型號： | UPSD3334D-40U6T |
| 廠商： | 意法半導體 |
| 英文描述： | Turbo Series Fast 8032 MCU with Programmable Logic |
| 中文描述： | Turbo系列8032微控制器的快速可編程邏輯 |
| 文件頁數(shù)： | 154/231頁 |
| 文件大?。?/td> | 3722K |
| 代理商： | UPSD3334D-40U6T |
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uPSD33xx
154/231
Flash Sector Erase.
The Sector Erase instruc-
tion sequence uses six WRITE operations, as de-
scribed in
Table 80., page 148
. Additional Flash
Sector Erase commands to other sectors within
the same Flash array may be issued by the 8032
if the additional commands are sent within a limit-
ed amount of time.
The Erase Time-out Flag Bit (DQ3) reflects the
time-out period allowed between two consecutive
sector erase instruction sequence bytes. If multi-
ple sector erase commands are desired, the addi-
tional sector erase commands (30h) must be sent
by the 8032 to another sector within 80μs after the
previous sector erase command. DQ3 is 0 before
this time period has expired, indicating it is OK to
issue additional sector erase commands. DQ3 will
go to logic ’1’ if the time has been longer than 80μs
since the previous sector erase command (time
has expired), indicating that is not OK to send an-
other sector erase command. In this case, the
8032 must start a new sector erase instruction se-
quence (unlock and command), beginning again
after the current sector erase operation has com-
pleted.
During a Sector Erase operation, the memory sta-
tus may be checked by reading the Error Flag Bit
(DQ5), the Toggle Flag Bit (DQ6), and the Data
Polling Flag Bit (DQ7), as detailed in
Reading the
Erase/Program Status Bits, page 149
.
During a Sector Erase operation, a Flash memory
accepts only Reset Flash and Suspend Sector
Erase instruction sequences. Erasure of one
Flash memory sector may be suspended, in order
to read data from another Flash memory sector,
and then resumed.
The address provided with the initial Flash Sector
Erase command sequence (
Table 80., page 148
)
must select the first desired sector (FSx or CS-
BOOTx) to erase. Subsequent sector erase com-
mands that are appended within the time-out
period must be addressed to other desired seg-
ments within the same Flash memory array.
Suspend Sector Erase.
When a Sector Erase
operation is in progress, the Suspend Sector
Erase instruction sequence can be used to sus-
pend the operation by writing B0h to any valid ad-
dress within the Flash array that currently is
undergoing an erase operation. This allows read-
ing of data from a different Flash memory sector
within the same array after the Erase operation
has been suspended. Suspend Sector Erase is
accepted only during an Erase operation.
There is up to 15μs delay after the Suspend Sector
Erase command is accepted and the array goes to
Read Array mode. The 8032 will monitor the Tog-
gle Flag Bit (DQ6) to determine when the erase
operation has halted and Read Array mode is ac-
tive.
If a Suspend Sector Erase instruction sequence
was executed, the following rules apply:
–
Attempting to read from a Flash memory
sector that was being erased outputs invalid
data.
–
Reading from a Flash memory sector that was
not
being erased is valid.
–
The Flash memory cannot
be programmed,
and only responds to Resume Sector Erase
and Reset Flash instruction sequences.
–
If a Reset Flash instruction sequence is
received, data in the Flash memory sector that
was being erased is invalid.
Resume Sector Erase.
If a Suspend Sector
Erase instruction sequence was previously exe-
cuted, the erase cycle may be resumed with this
instruction sequence. The Resume Sector Erase
instruction sequence consists of writing the com-
mand 30h to any valid address within the Flash ar-
ray that was suspended as shown in
Table
80., page 148
.
Reset Flash.
The Reset Flash instruction se-
quence resets the embedded algorithm running on
the state machine in the targeted Flash memory
(Main or Secondary) and the memory goes into
Read Array mode. The Reset Flash instruction
consists of one bus WRITE cycle as shown in
Ta-
ble 80., page 148
, and it must be executed after
any error condition that has occurred during a
Flash memory Program or Erase operation.
It may take the Flash memory up to 25μs to com-
plete the Reset cycle. The Reset Flash instruction
sequence is ignored when it is issued during a
Program or Bulk Erase operation. The Reset Flash
instruction sequence aborts any on-going Sector
Erase operation and returns the Flash memory to
Read Array mode within 25μs.
Reset Signal Applied to Flash Memory.
When-
ever the PSD Module receives a reset signal from
the MCU Module, any operation that is occurring in
either Flash memory array will be aborted and the
array(s) will go to Read Array mode. It may take up
to 25μs to abort an operation and achieve Read
Array mode.
A reset from the MCU Module will result from any
of these events: an active signal on the uPSD33xx
RESET_IN input pin, a watchdog timer time-out,
detection of low V
CC
, or a JTAG debug channel re-
set event.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
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| UPSD3334DV40U6 | 制造商:STMicroelectronics 功能描述:MCU 8-Bit uPSD 8032 CISC 256KB Flash 3.3V 80-Pin TQFP Tray |
| UPSD3334DV-40U6 | 功能描述:8位微控制器 -MCU 256K Flash 8K SRAM RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| UPSD3354D-40T6 | 功能描述:8位微控制器 -MCU 8032 MCU USB RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| UPSD3354D-40U6 | 功能描述:8位微控制器 -MCU 8BIT Fast 8032 MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| UPSD3354DV-40T6 | 功能描述:8位微控制器 -MCU 8032 MCU USB RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
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