參數(shù)資料
型號： UPD4664312F9-BE75X-CR2
廠商： NEC Corp.
英文描述： 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述： 6400位CMOS移動指明內(nèi)存分詞由16位溫度范圍
文件頁數(shù)： 15/36頁
文件大?。?/td> 299K
代理商： UPD4664312F9-BE75X-CR2
Preliminary Data Sheet M15867EJ5V0DS
15
μ
PD4664312-X
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (1/2)
Parameter
Symbol
Test condition
Density of
-B65X
Unit
data hold
MIN.
TYP.
MAX.
Input leakage current
I
LI
V
IN
= 0 V to V
CC
–1.0
+1.0
μ
A
I/O leakage current
I
LO
V
I/O
= 0 V to V
CC
, /CS = V
IH
or
–1.0
+1.0
μ
A
/WE = V
IL
or /OE = V
IH
Operating supply current
I
CCA
/CS = V
IL
, Minimum cycle time,
45
mA
I
I/O
= 0 mA
Standby supply current
I
SB1
/CS
≥
V
CC
0.2 V,
64M bits
60
100
μ
A
MODE
≥
V
CC
0.2 V
I
SB2
/CS
≥
V
CC
0.2 V,
16M bits
50
60
MODE
≤
0.2 V
8M bits
45
50
4M bits
40
45
0M bit
10
High level output voltage
V
OH
I
OH
= –0.5 mA
0.8V
CC
V
Low level output voltage
V
OL
I
OL
= 1 mA
0.2V
CC
V
Remark
V
IN
: Input voltage, V
I/O
: Input / Output voltage
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) (2/2)
Parameter
Symbol
Test condition
Density of
-BE75X
Unit
data hold
MIN.
TYP.
MAX.
Input leakage current
I
LI
V
IN
= 0 V to V
CC
Q
–1.0
+1.0
μ
A
I/O leakage current
I
LO
V
I/O
= 0 V to V
CC
Q, /CS = V
IH
or
–1.0
+1.0
μ
A
/WE = V
IL
or /OE = V
IH
Operating supply current
I
CCA
/CS = V
IL
, Minimum cycle time,
40
mA
I
I/O
= 0 mA
Standby supply current
I
SB1
/CS
≥
V
CC
0.2 V,
64M bits
60
100
μ
A
MODE
≥
V
CC
0.2 V
I
SB2
/CS
≥
V
CC
0.2 V,
16M bits
50
60
MODE
≤
0.2 V
8M bits
45
50
4M bits
40
45
0M bit
10
High level output voltage
V
OH
I
OH
= –0.5 mA
0.8V
CC
Q
V
Low level output voltage
V
OL
I
OL
= 1 mA
0.2V
CC
Q
V
Remark
V
IN
: Input voltage, V
I/O
: Input / Output voltage
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