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2001
Document No. M15867EJ5V0DS00 (5th edition)
Date Published August 2002 NS CP (K)
Printed in Japan
MOS INTEGRATED CIRCUIT
μ
PD4664312-X
64M-BIT CMOS MOBILE SPECIFIED RAM
4M-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
PRELIMINARY DATA SHEET
The mark
shows major revised points.
Description
The
μ
PD4664312-X is a high speed, low power, 67,108,864 bits (4,194,304 words by 16 bits) CMOS Mobile
Specified RAM featuring Low Power Static RAM compatible function and pin configuration.
The
μ
PD4664312-X is fabricated with advanced CMOS technology using one-transistor memory cell.
The
μ
PD4664312-X is packed in 93-pin TAPE FBGA.
Features
4,194,304 words by 16 bits organization
Fast access time: 65, 75 ns (MAX.)
Fast page access time: 18, 25 ns (MAX.)
Byte data control: /LB (I/O0 to I/O7), /UB (I/O8 to I/O15)
Low voltage operation:2.7 to 3.1 V (-B65X)
2.7 to 3.1 V (Chip), 1.65 to 2.1 V (I/O) (-BE75X)
Operating ambient temperature: T
A
= –25 to +85 °C
Output Enable input for easy application
Chip Enable input: /CS pin
Standby Mode input: MODE pin
Standby Mode1: Normal standby (Memory cell data hold valid)
Standby Mode2: Density of memory cell data hold is variable
μ
PD4664312
Access
Operating supply
Operating
Supply current
time
voltage
ambient
At operating
At standby
μ
A (MAX.)
ns (MAX.)
V
temperature
mA (MAX.)
Density of data hold
Chip
I/O
°C
64M bits 16M bits 8M bits 4M bits
0M bit
-B65X
65
2.7 to 3.1
–
–25 to +85
45
100
60
50
45
10
-BE75X
Note
75
2.7 to 3.1 1.65 to 2.1
40
Note
Under development