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參數(shù)資料
| 型號： | UPD4664312F9-BE75X-CR2 |
| 廠商： | NEC Corp. |
| 英文描述： | 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 6400位CMOS移動指明內(nèi)存分詞由16位溫度范圍 |
| 文件頁數(shù)： | 11/36頁 |
| 文件大?。?/td> | 299K |
| 代理商： | UPD4664312F9-BE75X-CR2 |
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Preliminary Data Sheet M15867EJ5V0DS
11
μ
PD4664312-X
3. Page Read Operation
3.1 Features of Page Read Operation
Features
8 Words Mode
Page length
8 words
Page read-corresponding addresses
A2, A1, A0
Page read start address
Don’t care
Page direction
Don’t care
Interrupt during page read operation
Enabled
Note
Note
An interrupt is output when /CS = H or in case A3 or a higher address changes.
3.2 Page Length
8 words is supported as the page lengths.
3.3 Page-Corresponding Addresses
The page read-enabled addresses are A2, A1, and A0. Fix addresses other than A2, A1, and A0 during page read
operation.
3.4 Page Start Address
Since random page read is supported, any address (A2, A1, A0) can be used as the page read start address.
3.5 Page Direction
Since random page read is possible, there is not restriction on the page direction.
3.6 Interrupt during Page Read Operation
When generating an interrupt during page read, either make /CS high level or change A3 and higher addresses.
3.7 When page read is not used
Since random page read is supported, even when not using page read, random access is possible as usual.
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