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參數(shù)資料
| 型號： | UPD4664312F9-BE75X-CR2 |
| 廠商： | NEC Corp. |
| 英文描述： | 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 6400位CMOS移動(dòng)指明內(nèi)存分詞由16位溫度范圍 |
| 文件頁數(shù)： | 13/36頁 |
| 文件大?。?/td> | 299K |
| 代理商： | UPD4664312F9-BE75X-CR2 |
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Preliminary Data Sheet M15867EJ5V0DS
13
μ
PD4664312-X
4.2 Cautions for Setting Mode Register
Since, for the mode register setting, the internal counter status is judged by toggling /CS and /OE, toggle /CS at every
cycle during entry (read cycle twice, write cycle twice), and toggle /OE like /CS at the first and second read cycles.
If incorrect addresses or data are written, or if addresses or data are written in the incorrect order, the setting of the
mode register is not performed correctly.
When the highest address (3FFFFFH) is read consecutively three or more times, the mode register setting entries are
not performed correctly. (Immediately after the highest address is read, the setting of the mode register is not performed
correctly.) Perform the setting of the mode register after power application or after accessing other than the highest
address.
Once the refresh density has been set in the mode register, these settings are retained until they are set again, while
applying the power supply. However, the mode register setting will become undefined if the power is turned off, so set
the mode register again after power application.
For the timing chart and flow chart, refer to
Figure 6-12. Mode Register Setting Timing Chart
,
Figure 6-13. Mode
Register Setting Flow Chart
.
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