參數(shù)資料
型號: UPD4664312F9-B65X-CR2
廠商: NEC Corp.
英文描述: 64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述: 6400位CMOS移動指明內(nèi)存分詞由16位溫度范圍
文件頁數(shù): 18/36頁
文件大小: 299K
代理商: UPD4664312F9-B65X-CR2
Preliminary Data Sheet M15867EJ5V0DS
18
μ
PD4664312-X
Write Cycle
Parameter
Symbol
-B65X
-BE75X
Unit Note
MIN.
MAX.
MIN.
MAX.
Write cycle time
t
WC
65
75
ns
/CS to end of write
t
CW
55
60
ns
Address valid to end of write
t
AW
55
60
ns
/LB, /UB to end of write
t
BW
55
60
ns
Write pulse width
t
WP
50
55
ns
Write recovery time
t
WR
0
0
ns
/CS pulse width
t
CP
10
10
ns
/LB, /UB high level pulse width
t
BP
10
10
ns
/WE high level pulse width
t
WHP
10
10
ns
Address setup time
t
AS
0
0
ns
/OE high level to address hold
t
OHAH
–5
–5
ns
/CS high level to address hold
t
CHAH
0
0
ns
1
/LB, /UB high level to address hold
t
BHAH
0
0
ns
1, 2
Data valid to end of write
t
DW
30
35
ns
Data hold time
t
DH
0
0
ns
/OE high level to /WE set
t
OES
0
10,000
0
10,000
ns
3
/WE high level to /OE set
t
OEH
10
10,000
10
10,000
ns
Notes 1.
When t
AS
| t
CHAH
|, | t
BHAH
| and t
CP
18 ns, t
CHAH
and t
BHAH
(MIN.) are –15 ns.
t
CHAH
, t
BHAH
t
AS
/LB, /UB, /CS (Input)
Address (Input)
/WE (Input)
2.
t
BHAH
is specified from when both /LB and /UB become high level.
3.
t
OES
and t
OEH
(MAX.) are applied while /CS is being hold at low level.
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