參數(shù)資料
型號(hào): UPA836TD
英文描述: TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP
中文描述: 晶體管|晶體管|一對|叩| 6V的五(巴西)總裁| 100mA的一(c)|的TSOP
文件頁數(shù): 5/40頁
文件大?。?/td> 196K
代理商: UPA836TD
Data Sheet P15358EJ1V0DS
5
μ
PA836TD
Q1
Q2
V
CE
= 1 V
30
25
20
15
10
5
0
0.2
0.4
0.8
0.6
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
100
80
60
40
20
0
0.2
0.4
0.6
0.8
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
30
25
20
15
10
5
0
0.2
0.4
0.8
0.6
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
100
80
60
40
20
0
0.2
0.4
0.6
0.8
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
30
25
20
15
10
5
0
0.2
0.4
0.8
0.6
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
100
80
60
40
20
0
0.2
0.4
0.6
0.8
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
相關(guān)PDF資料
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