參數資料
型號: UPA836TD-T3
英文描述: TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP
中文描述: 晶體管|晶體管|一對|叩| 6V的五(巴西)總裁| 100mA的一(c)|的TSOP
文件頁數: 1/40頁
文件大?。?/td> 196K
代理商: UPA836TD-T3
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15358EJ1V0DS00 (1st edition)
Date Published March 2001 NS CP(K)
Printed in Japan
2001
NPN SILICON RF TWIN TRANSISTOR
μ
PA836TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
Low voltage operation
2 different built-in transistors (2SC5435, 2SC5437)
Q1: Built-in low noise, high-gain transistor
NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
f
T
= 12.0 GHz TYP.,
S
21e
Q2: Built-in low noise transistor
NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
6-pin lead-less minimold package
2
= 8.5 dB TYP. @ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
BUILT-IN TRANSISTORS
Q1
Q2
3-pin thin-type ultra super minimold part No.
2SC5435
2SC5437
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
μ
PA836TD
50 pcs (Non reel)
8 mm wide embossed taping
μ
PA836TD-T3
10 kpcs/reel
Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
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