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參數(shù)資料
| 型號： | UPA836TD-T3 |
| 英文描述： | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| 中文描述： | 晶體管|晶體管|一對|叩| 6V的五（巴西）總裁| 100mA的一（c）|的TSOP |
| 文件頁數(shù)： | 3/40頁 |
| 文件大?。?/td> | 196K |
| 代理商： | UPA836TD-T3 |
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Data Sheet P15358EJ1V0DS
3
μ
PA836TD
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
(1) Q1
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
100
nA
Emitter Cut-off Current
I
EBO
V
BE
= 1 V, I
C
= 0 mA
100
nA
DC Current Gain
h
FE
Note 1
V
CE
= 3 V, I
C
= 10 mA
75
150
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
10.0
12.0
GHz
Insertion Power Gain
S
21e
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
7.0
8.5
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
1.5
2.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
0.4
0.7
pF
(2) Q2
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
100
nA
Emitter Cut-off Current
I
EBO
V
BE
= 1 V, I
C
= 0 mA
100
nA
DC Current Gain
h
FE
Note 1
V
CE
= 1 V, I
C
= 3 mA
80
160
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
4.0
4.5
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
9.0
GHz
Insertion Power Gain (1)
S
21e
2
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
2.5
3.5
dB
Insertion Power Gain (2)
S
21e
2
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
6.5
dB
Noise Figure (1)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
1.7
2.5
dB
Noise Figure (2)
NF
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz,
Z
S
= Z
opt
1.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
0.75
0.85
pF
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
h
FE
CLASSIFICATION
Rank
FB
Marking
nJ
h
FE
Value of Q1
75 to 150
h
FE
Value of Q2
80 to 160
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