- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361578 > UPA828TC Discrete PDF資料下載
參數(shù)資料
| 型號(hào)： | UPA828TC |
| 英文描述： | Discrete |
| 中文描述： | 離散 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 78K |
| 代理商： | UPA828TC |
Data Sheet PU10167EJ01V0DS
2
μ
PA828TC
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
5
V
Collector to Emitter Voltage
V
CEO
3
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
tot
Note
90 in 1 element
mW
180 in 2 elements
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (T
A
= +25
°
C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0 mA
100
nA
DC Current Gain
h
FE
Note 1
V
CE
= 2 V, I
C
= 20 mA
70
140
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
7.0
9.0
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
9.0
11.0
GHz
Insertion Power Gain (1)
S
21e
2
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
6.0
7.5
dB
Insertion Power Gain (2)
S
21e
2
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
7.0
8.5
dB
Noise Figure (1)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
1.3
2.0
dB
Noise Figure (2)
NF
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
1.3
2.0
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
0.4
0.8
pF
h
FE
Ratio
h
FE1
/ h
FE2
V
CE
= 2 V, I
C
= 20 mA,
h
FE1
: Smaller value of Q1 and Q2
h
FE2
: Larger value of Q1 and Q2
0.85
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
KB
Marking
4E
h
FE
Value
70 to 140
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA829TD | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| UPA829TD-T3 | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| UPA836TD | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| UPA836TD-T3 | TRANSISTOR | BJT | PAIR | NPN | 6V V(BR)CEO | 100MA I(C) | TSOP |
| UPA841TC | TRANSISTOR | BJT | PAIR | NPN | 5.5V V(BR)CEO | 30MA I(C) | TSOP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA828TD-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA828TD-T3-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA828TF | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA828TF_99 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA828TF-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。