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參數(shù)資料
| 型號： | TPC8403 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) |
| 中文描述： | 場效應(yīng)晶體管硅P / N首頁頻道馬鞍山型（P通道U型MOSII / N首頁頻道U型MOSII） |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 309K |
| 代理商： | TPC8403 |
TPC8403
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
(P Channel U-MOSII/N Channel U-MOSII)
TPC8403
Motor Drive Applications
Notebook PC Applications
Portable Equipment Applications
Low drain-source ON resistance: P Channel R
DS (ON)
= 45 m
(typ.)
N Channel R
DS (ON)
= 25 m
(typ.)
High forward transfer admittance: P Channel |Y
fs
| = 6.2 S (typ.)
N Channel |Y
fs
| = 7.8 S (typ.)
Low leakage current:
P Channel I
DSS
=
10 μA (V
DS
=
30 V)
N Channel I
DSS
= 10 μA (V
DS
= 30 V)
Enhancement mode
: P Channel V
th
=
1.0~
2.2 V (V
DS
=
10 V, I
D
=
1 mA)
: N Channel V
th
= 1.3~2.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Ta
=
25°C)
Rating
Characteristics
Symbol
P Channel N Channel
Unit
Drain-source voltage
V
DSS
30
30
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
30
30
V
Gate-source voltage
V
GSS
±
20
±
20
V
DC
(Note 1)
I
D
4.5
6
Drain current
Pulse
(Note 1)
I
DP
18
24
A
Single-device operation
(Note 3a)
P
D(1)
1.5
1.5
Drain power
dissipation
(t
=
(Note 2a) Single-device value at
dual operation
(Note 3b)
Single-device operation
dissipation
(t
=
(Note 2b) Single-device value at
dual operation
(Note 3b)
P
D(2)
1.1
1.1
(Note 3a)
P
D(1)
0.75
0.75
Drain power
P
D(2)
0.45
0.45
W
Single pulse avalanche energy
E
AS
26.3
(Note 4a)
46.8
(Note 4b)
mJ
Avalanche current
I
AR
4.5
6
A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)
E
AR
0.11
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-6J1E
Weight: 0.080 g (typ.)
Circuit Configuration
8
7
6
5
1
N-ch
2
3
P-ch
4
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|---|---|
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