參數(shù)資料
型號: TMS320WP010PZA
英文描述: Cell-Phone Circuit
中文描述: 手機(jī)電路
文件頁數(shù): 101/132頁
文件大?。?/td> 1707K
代理商: TMS320WP010PZA
SPRS145G
JULY 2000
REVISED FEBRUARY 2002
101
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251
1443
external memory interface
read
timings
switching characteristics over recommended operating conditions for an external memory
interface read at 40 MHz [H = 0.5t
c(CO)
] (see Figure 44)
PARAMETER
MIN
MAX
UNIT
td(COL-CNTL)
Delay time, CLKOUT low to control valid
4
ns
td(COL-CNTH)
Delay time, CLKOUT low to control inactive
5
ns
td(COL-A)RD
Delay time, CLKOUT low to address valid
8
ns
td(COH-RDL)
Delay time, CLKOUT high to RD strobe active
5
ns
td(COL-RDH)
Delay time, CLKOUT low to RD strobe inactive high
8
1
ns
td(COL-SL)
Delay time, CLKOUT low to STRB strobe active low
5
ns
td(COL-SH)
Delay time, CLKOUT low to STRB strobe inactive high
6
ns
td(WRN)
Delay time, W/R going low to R/W rising
5
ns
th(A)COL
Hold time, address valid after CLKOUT low
2
ns
tsu(A)RD
Setup time, address valid before RD strobe active low
H
7
ns
th(A)RD
Hold time, address valid after RD strobe inactive high
0
ns
timing requirements [H = 0.5t
c(CO)
] (see Figure 44)
MIN
MAX
UNIT
ta(A)
Access time, read data from address valid
2H
10
ns
ta(RD)
Access time, read data from RD low
H
7
ns
tsu(D)RD
th(D)RD
Setup time, read data before RD strobe inactive high
8
ns
Hold time, read data after RD strobe inactive high
0
ns
th(AIV-D)
Hold time, read data after address invalid
0
ns
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