參數(shù)資料
型號： TMS320C10-14
廠商： Texas Instruments, Inc.
元件分類： 數(shù)字信號處理
英文描述： Digital Signal Processors(280ns指令周期，分離的程序和數(shù)據(jù)總線，外部輪詢中斷的DSP)
中文描述： 數(shù)字信號處理器（280ns指令周期，分離的程序和數(shù)據(jù)總線，外部輪詢中斷的數(shù)字信號處理器）
文件頁數(shù)： 47/139頁
文件大小： 1478K
代理商： TMS320C10-14
TMS320E14, TMS320P14
DIGITAL SIGNAL PROCESSORS
SPRS009C–JANUARY 1987–REVISED JULY 1991
POST OFFICE BOX 1443
HOUSTON, TEXAS 77001
47
PROGRAMMING THE TMS320E14/P14 EPROM CELL
The
′
E14 and
′
P14 include a 4K
×
16-bit industry-standard EPROM cell for prototyping and low-volume
production. The
′
C14 with a 4K-word masked ROM then provides a migration path for cost-effective production.
An EPROM adapter socket (part # TMDX3270110), shown in Figure 5, is available to provide 68-pin to 28-pin
conversion for programming the
′
E14 and
′
P14.
Key features of the EPROM cell include the normal programming operation as well as verification. The EPROM
cell also includes a code protection feature that allows code to be protected against copyright violations.
The
′
E14/P14 EPROM cells are programmed using the same family and device codes as the TMS27C64 8K
×
8-bit EPROM. The TMS27C64 EPROM series are ultraviolet-light erasable, electrically programmable,
read-only memories, fabricated using HVCMOS technology. They are pin compatible with existing 28-pin ROMs
and EPROMs. These EPROMs operate from a 5-V supply in the read mode; however, a 12.5-V supply is needed
for programming. All programming signals are TTL level. For programming outside the system, existing EPROM
programmers can be used. Locations may be programmed singly, in blocks, or at random.
Figure 5. EPROM Adapter Socket
The
′
E14/P14 devices use 13 address lines to address the 4K-word memory in byte format (8K-byte memory).
In word format, the most-significant byte of each word is assigned an even address and the least-significant byte
an odd address in the byte format. Programming information should be downloaded to EPROM programmer
memory in a high-byte to low-byte order for proper programming of the devices (see Figure 6).
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